Mouser to Supply onsemi GaNEXUS GaN FETs for AI, Industrial, Energy and Robotics Applications
TECHWORLD ·
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Mouser Electronics has announced the availability of onsemi's GaNEXUS GaN FETs.
The GaNEXUS GaN FETs feature high-speed switching, low gate charge and low output charge, and are suitable for AI, data centers, industrial automation, robotics and energy infrastructure.
The GaNEXUS family consists of 40V to 650V enhancement-mode discrete GaN HEMTs, and the 650V GaNEXUS Smart GaN FET integrates protection features.
Mouser Electronics has announced the availability of onsemi's new GaNEXUS GaN FETs. The GaNEXUS GaN FETs leverage the properties of GaN wide-bandgap materials.
The devices feature high-speed switching, low gate charge and low output charge, with a focus on improving efficiency. They are suitable for AI, data centers, industrial automation, robotics and energy infrastructure applications, and are used in low-voltage, medium-voltage, high-voltage and extra-high-voltage power conversion.
The GaN-based performance advantages of the GaNEXUS GaN FETs translate into higher operating frequencies and improved power density in power conversion, helping reduce the size of magnetic components.
The GaNEXUS family consists of enhancement-mode discrete GaN HEMT high-electron-mobility transistor devices, with a voltage range of 40V to 650V. The lineup also includes the 650V GaNEXUS Smart GaN FET, which integrates protection features to improve reliability and simplify system integration.
The GaNEXUS solutions are designed to improve the way modern power systems convert and manage energy, with a focus on supporting design engineers. They are built to reduce design complexity, accelerate development and certification, ease thermal management and cooling requirements, and optimize overall power distribution network performance. Applications include AI servers, 48V intermediate bus converters (IBC), battery backup units (BBU) and motor drives.
In low-voltage and medium-voltage systems, the focus is on reducing the size of magnetic components and achieving higher power density. This also supports improved efficiency, better thermal performance, greater control stability and lower switching losses.
In high-voltage applications, they are used in AI power shelves, high-voltage DC-DC conversion, PFC power stages and LLC power stages. In these cases, they can reduce the size of magnetic components in high-frequency AC-DC and resonant power stages by up to 60%, improve power density in PFC, LLC and high-voltage (HV) DC-DC architectures, and lower thermal management costs and operating costs.
Source: TECHWORLD · Lee Gwang-jae
Original: https://www.epnc.co.kr/news/articleView.html?idxno=406916
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Source: TECHWORLD
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